參數(shù)資料
型號(hào): FDD3680
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: FAST SWITCHING DIODE_1N4148_SOD-323__
中文描述: 25 A, 100 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 75K
代理商: FDD3680
FDD3680 Rev B1(W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 6.1A
V
DS
= 15V
30V
50V
0
500
1000
1500
2000
2500
3000
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0
V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
0
10
20
30
40
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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