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參數(shù)資料
| 型號： | FDD3680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | FAST SWITCHING DIODE_1N4148_SOD-323__ |
| 中文描述： | 25 A, 100 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 75K |
| 代理商： | FDD3680 |
FDD3680 Rev B1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source
Avalanche Current
V
DD
= 50 V,
I
D
= 6.1 A
245
mJ
6.1
A
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
100
V
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
I
D
= 250
μ
A, Referenced to 25
°
C
–101
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
2
2.4
–6.5
4
V
mV/
°
C
V
GS
= 10 V,
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 6.1 A
I
D
= 6.1 A, T
J
= 125
°
C
I
D
= 5.8 A
V
DS
= 5 V
I
D
= 6.1 A
32
61
34
46
92
51
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
25
A
S
25
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1735
176
53
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
14
8.5
63
21
38
8.1
9.2
25
17
94
34
53
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 10
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 6.1 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.9
A
V
SD
V
GS
= 0 V,
I
S
= 2.9 A
(Note 2)
0.73
1.3
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
= 40oC/W when
mounted on a 1in2 pad of
2oz copper.
b) R
= 96oC/W on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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