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參數(shù)資料
| 型號： | FDC658P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 249K |
| 代理商： | FDC658P |
FDC658P Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
1
3
7
15
30
30
100
300
1000
3000
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0
3
6
9
12
15
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-15V
I = -4A
-10V
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
3
10
30
80
-
D
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = 156°C/W
T = 25°C
A
JA
DC
1s
100ms
10ms
1ms
100us
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =156°C/W
T = 25°C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = 156°C/W
JA
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC658P | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 50 MO SSOT6 |
| FDC658P-NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDC6901L | 功能描述:MOSFET Integ. Load Switch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6901L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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