參數(shù)資料
型號: FDC6561AN
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual N-Channel Logic Level PowerTrenchTM MOSFET
中文描述: 2500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 3/8頁
文件大小: 256K
代理商: FDC6561AN
FDC6561AN Rev.C
0
1
2
3
4
0
2
4
6
8
10
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V =10V
3.5V
4.5V
4.0V
6.0V
3.0V
0
2
4
6
8
10
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
V = 4.0V
10V
6.0V
4.5V
7.0V
R
5.0V
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5.Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V = 0V
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 10 V
I = 2.5 A
R
D
2
4
6
8
10
0.05
0.1
0.15
0.2
0.25
0.3
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 25°C
I = 1.3A
T = 125°C
A
1
2
3
4
5
6
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5V
T = -55°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
相關PDF資料
PDF描述
FDC6561 Dual N-Channel Logic Level PowerTrenchTM MOSFET
FDC658AP Single P-Channel Logic Level PowerTrench㈢ MOSFET -30V, -4A, 50mOhm
FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
FDC6901L Integrated Load Switch
FDC697P P-Channel 1.8V PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
FDC6561AN_Q 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6561AN-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC6561AN Series 30 V 0.095 Ohm Dual N-Ch Logic Level PowerTrench Mosfet SSOT-6
FDC658AP 功能描述:MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube