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參數(shù)資料
| 型號(hào)： | FDC634 |
| 廠商： | Fairchild Semiconductor Corporation |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 的P -溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | FDC634 |
November 1997
FDC634P
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching, and low in-line
power loss are needed in a very small outline surface
mount package.
Features
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol Parameter
FDC634P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
I
D
Gate-Source Voltage - Continuous
±8
V
Drain Current - Continuous
(Note 1a)
-3.5
A
- Pulsed
-11
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
FDC634P Rev.C
-3.5 A, -20 V. R
DS(ON)
= 0.080
@ V
GS
= -4.5 V
R
DS(ON)
= 0.110
@ V
GS
= -2.5 V.
SuperSOT
TM
-6 package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
D
D
D
S
D
G
SuperSOT -6
.634
pin
1
3
5
6
4
1
2
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC634P | P-Channel Enhancement Mode Field Effect Transistor(P溝道增強(qiáng)型MOS場效應(yīng)晶體管) |
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| FDC638APZ | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC634P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH 20V 3.5A SSOT6 |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du 制造商:Fairchild Semiconductor Corporation 功能描述:P CH MOSFET, -20V, 3.5A SUPER SOT-6 |
| FDC634P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDC636P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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