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參數(shù)資料
| 型號： | FDC633N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor(P溝道增強(qiáng)型MOS場效應(yīng)晶體管) |
| 中文描述： | 5200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 278K |
| 代理商： | FDC633N |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
42
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55
o
C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
0.4
0.67
1
V
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold VoltageTemp.Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-2.4
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 5.2 A
0.033
0.042
T
J
= 125
o
C
0.051
0.07
V
GS
= 2.5 V, I
D
= 4.5 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 5.2 A
0.043
0.054
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
11
A
Forward Transconductance
15
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
538
pF
Output Capacitance
226
pF
Reverse Transfer Capacitance
51
pF
t
D(on)
t
r
Turn - On Delay Time
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
5
12
ns
Turn - On Rise Time
17
27
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Delay Time
25
40
ns
Turn - Off Fall Time
5.3
11
ns
Total Gate Charge
V
DS
= 10 V, I
D
= 5.2 A,
V
GS
= 4.5 V
11
16
nC
Gate-Source Charge
2
nC
Gate-Drain Charge
2.4
nC
I
S
V
SD
Continuous Source Diode Current
1.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.7
1.2
V
T
J
= 125
o
C
0.57
1
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 78
o
C/W when mounted on a 1 in
2
pad of 2oz Cu on FR-4 board.
b. 156
o
C/W when mounted on a minimum pad of 2oz Cu on FR-4 board.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC633N Rev.C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC634 | P-Channel Enhancement Mode Field Effect Transistor |
| FDC634P | P-Channel Enhancement Mode Field Effect Transistor(P溝道增強(qiáng)型MOS場效應(yīng)晶體管) |
| FDC636P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC633N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC633N_F095 | 功能描述:MOSFET 30V 5.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| FDC634P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC634P. | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH 20V 3.5A SSOT6 |
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