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參數(shù)資料
| 型號： | FDC6321C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P Channel , Digital FET |
| 中文描述： | 0.68 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 273K |
| 代理商： | FDC6321C |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 6 V, I
D
= 0.5 A,
V
Gs
= 4.5 V, R
GEN
= 50
N-Ch
P-Ch
3
7
6
20
nS
t
r
Turn - On Rise Time
N-Ch
8
16
nS
P-Ch
9
18
t
D(off)
Turn - Off Delay Time
P-Channel
N-Ch
17
30
nS
V
DD
= -6 V, I
D
= -0.5 A,
V
Gen
= -4.5 V, R
GEN
= 50
P-Ch
55
110
t
f
Turn - Off Fall Time
N-Ch
13
25
nS
P-Ch
35
70
Q
g
Total Gate Charge
N-Channel
N-Ch
1.64
2.3
nC
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
P- Channel
P-Ch
1.1
1.5
Q
gs
Gate-Source Charge
N-Ch
0.38
nC
P-Ch
0.32
Q
gd
Gate-Drain Charge
V
DS
= -5 V,
I
D
= -0.25 A, V
GS
= -4.5 V
N-Ch
0.45
nC
P-Ch
0.25
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.3
A
P-Ch
-0.5
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note)
N-Ch
0.83
1.2
V
T
J
=125°C
0.69
0.85
V
GS
= 0 V, I
S
= -0.5 A
(Note)
P-Ch
-0.89
-1.2
T
J
=125°C
-0.75
-0.85
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6321C.RevB
b. 180
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
a. 140
O
C/W on a 0.125 in
2
pad of
2oz copper.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| FDC6321C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6322 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET |
| FDC6322C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6322C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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