參數(shù)資料
型號： FDC6321C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N & P Channel , Digital FET
中文描述： 0.68 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 2/11頁
文件大?。?/td> 273K
代理商： FDC6321C
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
DS
= 20 V, V
GS
= 0 V,
N-Ch
25
V
P-Ch
-25
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
N-Ch
26
mV /
o
C
P-Ch
-22
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55°C
10
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-20 V, V
GS
= 0 V,
P-Ch
-1
μA
T
J
= 55°C
-10
I
GSS
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
N-Ch
100
nA
P-Ch
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= 4.5 V, I
D
= 0.5 A
N-Ch
-2.6
mV /
o
C
P-Ch
2.1
V
GS(th)
Gate Threshold Voltage
N-Ch
0.65
0.8
1.5
V
P-Ch
-0.65
-0.86
-1.5
R
DS(ON)
Static Drain-Source On-Resistance
N-Ch
0.33
0.45
T
J
=125°C
0.51
0.72
V
GS
= 2.7 V, I
D
= 0.25A
V
GS
= -4.5 V, I
D
= -0.5 A
0.44
0.6
P-Ch
0.87
1.1
T
J
=125°C
1.21
1.8
V
GS
= -2.7 V, I
D
= -0.25 A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 0.5 A
V
DS
= -5 V, I
D
= -0.5 A
1.22
1.5
I
D(ON)
On-State Drain Current
N-Ch
1
A
P-Ch
-1
g
FS
Forward Transconductance
N-Ch
1.45
S
P-Ch
0.8
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
N-Ch
50
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Ch
63
C
oss
Output Capacitance
N-Ch
28
pF
P-Channel
P-Ch
34
C
rss
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0V,
f = 1.0 MHz
N-Ch
9
pF
P-Ch
10
FDC6321C.RevB
相關(guān)PDF資料
PDF描述
FDC6322 Dual N & P Channel , Digital FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6321C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
FDC6321C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6322 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET
FDC6322C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6322C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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