參數(shù)資料
型號(hào)： FDC6321C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N & P Channel , Digital FET
中文描述： 0.68 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 1/11頁
文件大?。?/td> 273K
代理商： FDC6321C
April 1999
FDC6321C
Dual N & P Channel , Digital FET
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DSS
, V
CC
V
GSS
, V
IN
I
D
, I
O
Drain-Source Voltage, Power Supply Voltage
25
-25
V
Gate-Source Voltage,
8
-8
V
Drain/Output Current
- Continuous
0.68
-0.46
A
- Pulsed
2
-1.5
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
0.7
T
J
,T
STG
ESD
Operating and Storage Tempature Ranger
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6
kV
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
FDC6321C.RevB
N-Ch 25 V, 0.68 A, R
DS(ON)
= 0.45
@ V
GS
= 4.5 V
P-Ch -25 V, -0.46 A, R
DS(ON)
= 1.1
@ V
GS
= -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. V
GS(th)
< 1.0V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple dual NPN & PNP digital transistors.
These dual N & P Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
digital transistors in load switching applications. Since bias
resistors are not required this dual digital FET can replace
several digital transistors with different bias resistors.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Mark:.321
1
5
3
2
6
4
D1
S2
G1
D2
S1
G2
SuperSOT -6
1999 Fairchild Semiconductor Corporation
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PDF描述
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FDC6323L Integrated Load Switch
FDC6324 Integrated Load Switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6321C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
FDC6321C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6322 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET
FDC6322C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6322C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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