參數(shù)資料
型號: FDC6320
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N & P Channel , Digital FET
中文描述: 雙N
文件頁數(shù): 4/7頁
文件大小: 100K
代理商: FDC6320
FDC6320C.Rev C
Typical Electrical Characteristics: N-Channel
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1
1.2
1.4
I , DRAIN CURRENT (A)
D
V = 2.0V
2.7
3.0
4.0
4.5
3.5
2.5
R
D
)
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
Figure 3. On-Resistance Variation
with Temperature
.
0.5
1
1.5
2
2.5
0
0.05
0.1
0.15
0.2
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5.0V
TJ
Figure 5. Transfer Characteristics.
0.2
0.4
V , BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.2
0.5
I
S
J
25°C
-55°C
V = 0V
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 4. On Resistance
Variation with
Gate-To- Source Voltage.
2
2.5
V , GATE TO SOURCE VOLTAGE (V)
3
3.5
4
0
3
6
9
12
15
I = 0.2A
R
D
125°C
25°C
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = 2.7 V
I = 0.2A
R
D
0
0.5
1
1.5
2
2.5
3
0
0.1
0.2
0.3
0.4
0.5
V , DRAIN-SOURCE VOLTAGE (V)
I
D
3.5
2.7
2.5
V = 4.5V
4.0
2.0
1.5
3.0
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參數(shù)描述
FDC6320C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6320C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6320C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6321C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6321C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6