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參數(shù)資料
| 型號： | FDC6320 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N & P Channel , Digital FET |
| 中文描述： | 雙N |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 100K |
| 代理商： | FDC6320 |
DMOS Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
N-Ch
5
11
nS
V
DD
= 6 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
P-Ch
6
12
t
r
Turn - On Rise Time
N-Ch
4.5
10
nS
P-Ch
6
12
t
D(off)
Turn - Off Delay Time
P-Channel
N-Ch
4
10
nS
V
DD
= -6 V, I
D
= -0.5 A,
V
GEN
= -4.5 V, R
GEN
= 50
P-Ch
7.4
15
t
f
Turn - Off Fall Time
N-Ch
3.2
8
nS
P-Ch
4
10
Q
g
Total Gate Charge
N-Channel
V
= 5 V,
I
D
= 0.2 A, V
GS
= 4.5 V
P-Channel
V
= -5 V,
I
D
= -0.2A, V
GS
= -4.5 V
N-Ch
0.29
0.4
nC
P-Ch
0.23
0.32
Q
gs
Gate-Source Charge
N-Ch
0.105
nC
P-Ch
0.12
Q
gd
Gate-Drain Charge
N-Ch
0.045
nC
P-Ch
0.03
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.5
A
P-Ch
-0.5
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note 2)
V
GS
= 0 V, I
S
= -0.5 A
(Note 2)
N-Ch
0.97
1.3
V
P-Ch
-1
-1.3
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
using the board layouts shown below on FR-4 PCB in a still air environment:
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6320C.Rev C
b. 180
of 2oz copper.
O
C/W on a 0.005 in
2
of pad
a. 140
2oz copper.
O
C/W on a 0.125 in
2
pad of
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6320C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6320C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6321C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
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