參數(shù)資料
型號: FDC6036P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 1.8V Specified PowerTrench MOSFET
中文描述: 5 A, 20 V, 0.044 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, FLMP, SUPERSOT-6
文件頁數(shù): 6/7頁
文件大小: 163K
代理商: FDC6036P
FDC6036P Rev C2 (W)
Typical Characteristics
0
1
2
3
4
5
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -5A
Vds = -5V
-15V
-10V
0
250
500
750
1000
1250
1500
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
Ciss
Crss
Coss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
100ms
1s
10s
1m
s
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 130
o
C/W
T
A
= 25
o
C
10ms
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 130
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 130 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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