- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375768 > FDC608PZ (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 2.5V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDC608PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 5.8 A, 20 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | FDC608PZ |
FDC608PZ
P-Channel 2.5V Specified PowerTrench
MOSFET
2006 Fairchild Semiconductor Corporation
FDC608PZ Rev B (W)
General Description
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
advanced
These devices are well suited for battery power
applications: load switching and power management,
battery power circuits, and DC/DC conversions.
Features
–5.8 A, –20 V.
R
DS(ON)
= 30 m
@ V
GS
= –4.5 V
R
DS(ON)
= 43 m
@ V
GS
= –2.5 V
Low Gate Charge
High performance trench technology for extremely
low R
DS(ON)
SuperSOT
TM
–6 package: small footprint (72%
smaller than standard SO–8
)
low profile (1mm thick).
D
D
D
S
D
G
SuperSOT -6
TM
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Maximum Power Dissipation
P
D
Ratings
–20
±
12
–5.8
–20
1.6
0.8
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
.608Z
FDC608PZ
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
6
5
4
1
2
3
F
tm
June
2006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC60 | 60 WATTS OUTPUT POWER |
| FDC60-48D05 | 60 WATTS OUTPUT POWER |
| FDC60-12D3305 | 60 WATTS OUTPUT POWER |
| FDC60-12S05 | 60 WATTS OUTPUT POWER |
| FDC60-12S12 | 60 WATTS OUTPUT POWER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC610PZ | 功能描述:MOSFET -30V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC610PZ | 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET -30V 4.9mA |
| FDC610PZ_G | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| FDC6301 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET |
| FDC6301N | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。