參數(shù)資料
型號: FDC602P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應(yīng)管)
中文描述: 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SUPERSOT-6
文件頁數(shù): 4/8頁
文件大小: 246K
代理商: FDC602P
FDC602P Rev B(W)
Typical Characteristics
0
1
2
3
4
5
0
3
6
9
12
15
18
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -5.5A
V
DS
=-5.0V
-10V
-15V
0
400
800
1200
1600
2000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
10ms
1ms
10
20
30
40
50
P
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 156
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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