參數(shù)資料
型號(hào)： FDC602P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場(chǎng)效應(yīng)管)
中文描述： 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LEAD FREE, SUPERSOT-6
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 246K
代理商： FDC602P
FDC602P Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–20
V
Breakdown Voltage Temperature
–14
mV/
°
C
V
DS
= –16 V,
V
GS
= 12 V,
V
GS
= –12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
===
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–0.6
–0.9
3
–1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –4.5 V, I
D
= –5.5AT
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –5.5 A
I
D
= –5.5 A
I
D
= –4.5 A
0.027
0.038
0.038
0.035
0.050
0.053
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
19
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1456
300
150
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
15
11
57
37
14
3
5
27
20
91
59
20
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –5.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.7
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
=
300
μ
s, Duty Cycle
≤
=
2.0%
F
相關(guān)PDF資料
PDF描述
FDC602 P-Channel 2.5V Specified PowerTrench MOSFET
FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET
FDC604 P-Channel 1.8V Specified PowerTrench MOSFET
FDC604P P-Channel 1.8V Specified PowerTrench MOSFET
FDC606P P-Channel 1.8V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC602P_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
FDC602P_F095 功能描述:MOSFET -20V -5.5A P-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC602P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC602P Series 20 V 35 mOhms P-Channel 2.5 V PowerTrench Specified Mosfet SSOT-6
FDC6036P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6036P_F077 功能描述:MOSFET Trans P-Ch 20V 5A 6-Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*