參數(shù)資料
型號: FDC6000NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 7300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, FLMP, SUPERSOT-6, SSOT-6, 6 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 174K
代理商: FDC6000NZ
FDC6000NZ RevE1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 16 V,
V
GS
= 0 V
V
GS
=
±
12 V,
V
DS
= 0 V
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
14
mV/
°
C
μ
A
μ
A
1
±
10
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V,
V
GS
= 4.0 V,
V
GS
= 3.1 V,
V
GS
= 2.5 V,
V
GS
= 4.5 V, I
D
= 6.5A, T
J
=125
°
C
I
D
= 250
μ
A
0.6
0.9
1.5
V
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
–4
16.5
16.8
19.2
22.5
22.8
mV/
°
C
m
I
D
= 6.5 A
I
D
= 6.4 A
I
D
= 6.3 A
I
D
= 5.5 A
20
21
24
28
30
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 6.5 A
30
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
840
pF
C
oss
C
rss
R
G
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
210
100
2.3
pF
pF
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
10
20
ns
t
r
t
d(off)
t
f
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
15
18
9
27
32
18
ns
ns
ns
Q
g
Total Gate Charge
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 6.5 A,
8
11
nC
Q
gs
Q
gd
Gate–Source Charge
Gate–Drain Charge
1.5
2.1
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward Voltage V
GS
= 0 V,
1.25
1.2
A
V
I
S
= 1.25A
(Note 2)
0.7
F
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