- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDB8832 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1mOHM PDF資料下載
參數(shù)資料
| 型號： | FDB8832 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1mOHM |
| 中文描述： | 34 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 298K |
| 代理商： | FDB8832 |
F
FDB8832 Re
v. A
www.fairchildsemi.com
5
Figure 5.
1
10
0.1
1
10
100
1000
LIMITED
BY PACKAGE
60
4000
10us
100us
1ms
10ms
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
=
MAX RATED
T
C
= 25
o
C
DC
Forward Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1
10
100
500
5000
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C
apability
Figure 7.
0
1
2
3
4
0
50
100
150
200
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0.0
0.5
1.0
1.5
0
50
100
150
200
V
GS
= 5V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 10VDUTY CYCLE = 0.5% MAX
μ
s
Saturation Characteristics
Figure 9.
Variation vs Gate to Source Voltage
2
4
6
8
10
0
1
2
3
4
r
D
,
O
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance
Figure 10.
Resistance vs Junction Temperature
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
N
I
D
= 80A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB8860 | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm |
| FDB8870 | N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW |
| FDB8874 | N-Channel PowerTrench MOSFET |
| FDB8876 | N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm |
| FDB8878 | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB8832_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.1m?? |
| FDB8832_F085 | 功能描述:MOSFET 30V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8860 | 功能描述:MOSFET 30V N-Channel PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8860_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench㈢ MOSFET |
| FDB8860_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.6m |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。