參數(shù)資料
型號： FDB8832
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1mOHM
中文描述： 34 A, 30 V, 0.0022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/7頁
文件大小： 298K
代理商： FDB8832
F
FDB8832 Re
v. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
J
= 150°C
250
±
100
I
GSS
On Characteristics
Gate to Source Leakage Current
nA
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 5V
I
D
= 80A, V
GS
= 4.5V
I
D
= 80A, V
GS
= 10V
T
J
= 175°C
1.0
-
-
-
1.6
1.4
1.5
1.6
3.0
1.9
2.1
2.2
V
r
on
)
Drain to Source On Resistance
m
-
2.3
3.0
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
11400
2140
1260
1.2
204
100
10.9
33
22
43
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 5V
V
GS
= 0 to 1V
V
DD
= 15V
I
D
= 80A
I
g
= 1.0mA
265
130
14.2
-
-
-
DS(
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±20
80
80
34
See Figure 4
1246
300
2
-55 to +175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
C
< 165
o
C, V
GS
= 10V)
Drain Current Continuous (T
C
< 163
o
C, V
GS
= 5V)
Drain Current Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25
o
C
T
J
, T
STG
Operating and Storage Temperature
I
D
A
E
AS
mJ
W
W/
o
C
o
C
P
D
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Ambient, lin
2
copper pad area
0.5
62
43
o
C/W
o
C/W
o
C/W
Device Marking
FDB8832
Device
FDB8832
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
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