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參數(shù)資料
| 型號(hào)： | FDB7030BLS |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第56A條（?。﹟對(duì)263AB |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 354K |
| 代理商： | FDB7030BLS |
FDP7030BLS Rev B(W)
Typical Characteristics
0
30
60
90
120
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.0V
5.0V
V
GS
= 10V
4.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
100
120
R
D
,
D
V
GS
= 4.5V
5.0V
6.0V
8.0V
7.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 28A
V
GS
=10V
0.01
0.02
0.03
0.04
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 14A
T
A
= 100
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 55
o
C
25
o
C
100
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.2
0.3
0.4
0.5
0.6
I
S
,
T
A
= 100
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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