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參數(shù)資料
| 型號： | FDB7030BLS |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第56A條（?。﹟對263AB |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 354K |
| 代理商： | FDB7030BLS |
May 2001
FDP7030BLS / FDB7030BLS
30V N
-
Channel PowerTrench
ò
SyncFET
2001 Fairchild Semiconductor Corporation
FDP7030BLS Rev B(W)
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP7030BLS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP7030BLS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP7030BL in parallel with a
Schottky diode.
Features
56 A, 30 V.
R
DS(ON)
= 10.5 m
@ V
GS
= 10 V
R
DS(ON)
= 16.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (15nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Ratings
30
Units
V
±
20
56
160
65
V
(Note 1)
(Note 1)
A
W
Derate above 25
°
C
0.43
W/
°
C
°
C
–65 to +100
275
°
C
2.3
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB7030BLS
FDB7030BLS
FDP7030BLS
FDP7030BLS
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
F
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