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參數(shù)資料
| 型號(hào)： | FDT459NJ23Z |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 6.5AI（四）|的SOT - 223 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 86K |
| 代理商： | FDT459NJ23Z |
FDT457N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
August 1998
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDT457N
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
±20
V
I
D
Maximum Drain Current - Continuous
(Note 1a)
5
A
- Pulsed
16
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
FDT457N Rev.C
5 A, 30 V. R
DS(ON)
= 0.06
@ V
GS
= 10 V
R
DS(ON)
= 0.090
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOT
TM
-3
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
D
D
S
G
D
S
G
G
D
S
D
SOT-223
G
D
S
SOT-223
*
(J23Z)
1998 Fairchild Semiconductor Corporation
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