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參數(shù)資料
| 型號： | FDS3601N |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 100V V(BR)DSS | 1.3A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 100V的五（巴西）直| 1.3AI（四）|蘇 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 79K |
| 代理商： | FDS3601N |
May 2001
PRELIMINARY
FDS3601N
100V Dual N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDS3601N Rev B(W)
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
1.3 A, 100 V. R
DS(ON)
= 480 m
@ V
GS
= 10 V
R
DS(ON)
= 530 m
@ V
GS
= 6 V
Fast switching speed
Low gate charge (3.7nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S2
SO-8
G2S1G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
100
±
20
1.3
6
2
1.6
1.0
0.9
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS3601N
FDS3601N
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS3612 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3670 | 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3670_0011 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDS3672 | 功能描述:MOSFET 100V 7.5a .22 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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