參數(shù)資料
型號(hào)： FDB7030BLS
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第56A條（丁）|對(duì)263AB
文件頁數(shù)： 2/11頁
文件大?。?/td> 354K
代理商： FDB7030BLS
FDP7030BLS Rev B(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V,
I
D
= 1 mA
30
V
Breakdown Voltage Temperature
I
D
= 10 mA, Referenced to 25
°
C
22
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
500
100
–100
μA
nA
nA
(Note 2)
V
DS
= V
GS
,
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
=10 V, I
D
= 28A, T
J
= 100
°
C
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 1 mA
1
2.3
3
V
Gate Threshold Voltage
–4.4
mV/
°
C
I
D
= 28 A
I
D
= 23 A
8.6
13.2
12.4
10.5
16.5
16.5
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 28 A
50
A
S
47
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d
(
off
)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
1708
474
134
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
(Note 2)
11
8
30
16
21
16
48
29
ns
ns
ns
ns
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
15
7
5
21
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 28 A
3.5
0.7
A
V
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 11.5A,
d
iF
/d
t
= 300 A/μs
I
S
= 3.5 A
I
S
= 7 A
(Note 1)
(Note 1)
0.44
0.60
20
20
ns
nC
(Note 2)
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
F
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