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參數資料
| 型號： | FDB2614 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 62 A, 200 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 3 PIN |
| 文件頁數： | 8/8頁 |
| 文件大?。?/td> | 735K |
| 代理商： | FDB2614 |
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FDB2614 Rev. A
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FAST
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FRFET
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MSXPro
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
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As used herein:
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in accordance with instructions for use provided in the labeling,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
FACT Quiet Series
GlobalOptoisolator
GTO
HiSeC
I
2
C
i-Lo
ImpliedDisconnect
IntelliMAX
ISOPLANAR
LittleFET
MICROCOUPLER
MicroFET
MicroPak
MICROWIRE
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power820417
PowerEdge
PowerSaver
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
SILENT SWITCHER
SMART START
SPM
Stealth
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TCM
TinyBoost
TinyBuck
TinyPWM
TinyPower
TinyLogic
TINYOPTO
TruTranslation
UHC
UniFET
UltraFET
VCX
Wire
Across the board. Around the world.
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
相關PDF資料 |
PDF描述 |
|---|---|
| FDB2710 | 250V N-Channel PowerTrench MOSFET |
| FDB33N25 | 250V N-Channel MOSFET |
| FDB33N25TM | 250V N-Channel MOSFET |
| FDB3632 | N-Channel PowerTrench MOSFET 100V, 80A, 9mз |
| FDI3632 | N-Channel PowerTrench MOSFET 100V, 80A, 9mз |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB2670 | 功能描述:MOSFET 200V N-Channel Pwr Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB2710 | 功能描述:MOSFET 250V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB28N30 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FDB28N30TM | 功能描述:MOSFET 300V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB-3 | 功能描述:化學物質 CAP 10/PACK RoHS:否 制造商:3M Electronic Specialty 產品:Adhesives 類型:Epoxy Compound 大小:1.7 oz 外殼:Plastic Tube |
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