參數(shù)資料
型號： FDB2614
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 200V N-Channel PowerTrench MOSFET
中文描述： 62 A, 200 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 735K
代理商： FDB2614
2
www.fairchildsemi.com
FDB2614 Rev. A
F
Package Marking and Ordering Information
Device Marking
Device
Package
D
2
-PAK
Reel Size
Tape Width
Quantity
FDB2614
FDB2614
330mm
24mm
800
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A, T
J
= 25
°
C
200
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.2
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
500
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 31A
V
DS
= 10V, I
D
= 31A
3.0
4.0
5.0
V
Static Drain-Source On-Resistance
--
22.9
27
m
Forward Transconductance
(Note 4)
--
72
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
--
5435
7230
pF
Output Capacitance
--
505
675
pF
Reverse Transfer Capacitance
--
110
165
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Delay Time
V
DD
= 100V, I
D
= 62A
V
GS
= 10V, R
GEN
= 25
(Note 4, 5)
--
77
165
ns
Turn-On Rise Time
--
284
560
ns
Turn-Off Delay Time
--
103
220
ns
Turn-Off Fall Time
--
162
335
ns
Total Gate Charge
V
DS
= 100V, I
D
= 62A
V
GS
= 10V
(Note 4, 5)
--
76
99
nC
Gate-Source Charge
--
35
--
nC
Gate-Drain Charge
--
18
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
62
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
186
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 62A
V
GS
= 0V, I
S
= 62A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.2
V
Reverse Recovery Time
--
145
--
ns
Reverse Recovery Charge
--
0.81
--
μ
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
AS
= 17A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
62A, di/dt
≤
100A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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