參數(shù)資料
型號: FDB050AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 18 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 2 PIN
文件頁數(shù): 10/11頁
文件大?。?/td> 564K
代理商: FDB050AN06A0
2003 Fairchild Semiconductor Corporation
FDB050AN06A0 / FDP050AN06A0 Rev. A
F
PSPICE Thermal Model
REV 23 February 2003
FDB050AN06A0T
CTHERM1 TH 6 5e-3
CTHERM2 6 5 1.3e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.9e-2
CTHERM5 3 2 4.7e-2
CTHERM6 2 TL 9e-2
RTHERM1 TH 6 1e-2
RTHERM2 6 5 3.1e-2
RTHERM3 5 4 4.5e-2
RTHERM4 4 3 1.2e-1
RTHERM5 3 2 1.3e-1
RTHERM6 2 TL 1.52e-1
SABER Thermal Model
SABER thermal model FDB050AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =5e-3
ctherm.ctherm2 6 5 =1.3e-2
ctherm.ctherm3 5 4 =1.4e-2
ctherm.ctherm4 4 3 =1.9e-2
ctherm.ctherm5 3 2 =4.7e-2
ctherm.ctherm6 2 tl =9e-2
rtherm.rtherm1 th 6 =1e-2
rtherm.rtherm2 6 5 =3.1e-2
rtherm.rtherm3 5 4 =4.5e-2
rtherm.rtherm4 4 3 =1.2e-1
rtherm.rtherm5 3 2 =1.3e-1
rtherm.rtherm6 2 tl =1.52e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相關PDF資料
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FDB12N50 N-Channel MOSFET 500V, 11.5A, 0.65ヘ
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相關代理商/技術參數(shù)
參數(shù)描述
FDB050AN06A0_SN00269 制造商:Fairchild Semiconductor Corporation 功能描述:60V,80A,5MOHM,D2PAK
FDB060AN08A0 功能描述:MOSFET Discrete Auto N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB070AN06_F085 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 80A, 7m??
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FDB070AN06A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET