參數(shù)資料
型號(hào)： EPC4
廠商： Altera Corporation
英文描述： Configuration Devices for SRAM-Based LUT Devices
中文描述： 配置SRAM器件基于LUT的器件
文件頁數(shù)： 30/36頁
文件大小： 283K
代理商： EPC4
30
Altera Corporation
Configuration Devices for SRAM-based LUT Devices Data Sheet
f
For EPC4, EPC8, and EPC16 device operating conditions, refer to the
Enhanced Configuration Devices (EPC4, EPC8, & EPC16) Data Sheet
.
Table 12. Absolute Maximum Ratings
Note (1)
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
V
I
I
MAX
I
OUT
P
D
T
STG
T
AMB
T
J
Supply voltage
With respect to ground
(2)
–2.0
7.0
V
DC input voltage
With respect to ground
(2)
–2.0
7.0
V
DC V
CC
or ground current
DC output current, per pin
50
mA
–25
25
mA
Power dissipation
250
mW
Storage temperature
No bias
–65
150
° C
Ambient temperature
Under bias
–65
135
° C
Junction temperature
Under bias
135
° C
Table 13. Recommended Operating Conditions
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
Supply voltage for 5.0-V operation
(3)
,
(4)
4.75 (4.50) 5.25 (5.50)
V
Supply voltage for 3.3-V operation
(3)
,
(4)
3.0 (3.0)
3.6 (3.6)
V
V
I
Input voltage
With respect to ground
–0.3
V
CC
+ 0.3
(5)
V
V
O
T
A
Output voltage
0
V
CC
70
V
Operating temperature
For commercial use
0
° C
For industrial use
–40
85
° C
t
R
t
F
Input rise time
20
ns
Input fall time
20
ns
Table 14. DC Operating Conditions
Symbol
Parameter
Conditions
Min
Max
Unit
V
IH
High-level input voltage
2.0
V
CC
+ 0.3
(5)
V
V
IL
V
OH
Low-level input voltage
–0.3
0.8
V
5.0-V mode high-level TTL output voltage I
OH
= –4 mA DC
(6)
3.3-V mode high-level CMOS output
voltage
2.4
V
I
OH
= –0.1 mA DC
(6)
V
CC
– 0.2
V
V
OL
I
I
I
OZ
Low-level output voltage
I
OL
= 4 mA DC
(6)
V
I
= V
CC
or ground
V
O
= V
CC
or ground
0.4
V
μ
A
μ
A
Input leakage current
–10
10
Tri-state output off-state current
–10
10
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