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參數(shù)資料
| 型號： | EDX5116ABSE-3B-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 512M bits XDR DRAM (32M words ?16 bits) |
| 中文描述： | 32M X 16 RAMBUS, PBGA104 |
| 封裝： | LEAD FREE, FBGA-104 |
| 文件頁數(shù)： | 70/78頁 |
| 文件大小： | 3611K |
| 代理商： | EDX5116ABSE-3B-E |
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Preliminary Data Sheet E0643E30 (Ver. 3.0)
70
EDX5116ABSE
Serial Interface Receive Timing
Figure 52 shows a timing diagram for the serial interface pins
of the memory component. This diagram represents a magni-
fied view of the pins only a few clock cycles.
The serial interface pins carry low-true signals: a high voltage
represents a logical zero and a low voltage represents a logical
one. Timing events are measured to and from the V
REF,RSL
level. Because timing intervals are measured in this fashion, it is
necessary to constrain the slew rate of the signals. The rise time
(t
R,SCK
and t
IR,SI
) and fall time (t
F,SCK
and t
IF,SI
) of the signals
are measured from the 20% and 80% points of the full-swing
levels.
20% = V
IL,SI
+ 0.2*(V
IH,SI
-V
IL,SI
)
50% = V
IL,SI
+ 0.5*(V
IH,SI
-V
IL,SI
)
80% = V
IL,SI
+ 0.8*(V
IH,SI
-V
IL,SI
)
There is one receiving window defined for each serial interface
signal (RST,CMD and SDI pins). This window has a set time
(t
S,RQ
) and a hold time (t
H,RQ
) measured around the falling
edge of the SCK clock signal.
Figure 52
S erial Interfac e Rec eive Waveforms
SCK
t
CYC,SCK
80%
20%
V
IL,SI
logic 1
t
IR,
SI
V
IH,SI
logic 0
V
REF,RSL
t
S,
SI
t
H,
SI
t
IF,
SI
80%
20%
V
IL,SI
logic 1
V
IH,SI
logic 0
V
REF,RSL
t
L,SCK
t
H,SCK
t
F,SCK
t
R,SCK
RST
CMD
SDI
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| EDX5116ABSE-2A-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-3A-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-3C-E | 512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-4C-E | 512M bits XDR DRAM (32M words ?16 bits) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDX5116ABSE-3C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ABSE-4C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR DRAM (32M words ?16 bits) |
| EDX5116ACSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM |
| EDX5116ACSE-3A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM |
| EDX5116ACSE-3B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits XDR? DRAM |
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