參數資料
型號: EDS2532AABJ-6B
廠商: Elpida Memory, Inc.
英文描述: 256M bits SDRAM (8M words ?32 bits)
中文描述: 256M位的SDRAM(800萬字?32位)
文件頁數: 36/48頁
文件大?。?/td> 614K
代理商: EDS2532AABJ-6B
EDS2532AABJ-6B
Data Sheet E0509E30 (Ver. 3.0)
36
Bank active command interval
1. Same bank: The interval between the two bank active commands must be no less than tRC.
2. In the case of different bank active commands: The interval between the two bank active commands must be no
less than tRRD.
CLK
Command
Address
BS
Bank 0
Active
ACT
ROW
ACT
ROW
Bank 0
Active
tRC
Bank Active to Bank Active for Same Bank
CLK
Command
Address
BS
Bank 0
Active
Bank 3
Active
ACT
ROW:0
ACT
ROW:1
tRRD
Bank Active to Bank Active for Different Bank
Mode register set to Bank active command interval
The interval between setting the mode register and executing a bank active command must be no less than
l
MRD.
CLK
Command
Address
Mode
Register Set
Bank
Active
MRS
l
MRD
ACT
BS & ROW
OPCODE
Mode register set to Bank active command interval
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參數描述
EDS2532AABJ-6B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words ?32 bits)
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