參數(shù)資料
型號(hào)： EDE5108GBSA-5A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC
中文描述： 64M X 8 DDR DRAM, 0.5 ns, PBGA64
封裝： MICRO, BGA-64
文件頁(yè)數(shù)： 42/66頁(yè)
文件大?。?/td> 697K
代理商： EDE5108GBSA-5A-E
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
42
Enabling a read command at every other clock supports the seamless burst read operation. This operation is
allowed regardless of same or different banks as long as the banks are activated.
READ
NOP
READ
CK
/CK
T0
T2
T4
T6
T8
T10
T1
T3
T5
T7
T9
T11
Command
DQS, /DQS
DQ
NOP
RL = 4
Burst interrupt is only
allowed at this timing.
A0
A1
A2
A3
out
B1
B2
B3
B4
B5
B6
B7
A
B
Burst Read Interrupt by Read
Notes :1. Read burst interrupt function is only allowed on burst of 8. burst interrupt of 4 is prohibited.
2. Read burst of 8 can only be interrupted by another read command. Read burst interruption by write
command or precharge command is prohibited.
3. Read burst interrupt must occur exactly two clocks after previous read command. any other read burst
interrupt timings are prohibited.
4. Read burst interruption is allowed to any bank inside DRAM.
5. Read burst with auto precharge enabled is not allowed to interrupt.
6. Read burst interruption is allowed by another read with auto precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, minimum read to precharge timing is AL + BL/2 where BL is the burst length
set in the mode register and not the actual burst (which is shorter because of interrupt).
相關(guān)PDF資料
PDF描述
EDE5104GBSA 512M bits DDR-II SDRAM
EDE5108ABSE 512M bits DDR2 SDRAM
EDE5108AESK 512M bits DDR2 SDRAM
EDE5108GBSA 512M bits DDR-II SDRAM
EDE5104AESK 512M bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE5116ABSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5116ABSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5116ABSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5116AFSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM (32M words x 16 bits)
EDE5116AFSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM (32M words x 16 bits)
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