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參數(shù)資料
| 型號： | EDE5108GBSA-5A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC |
| 中文描述： | 64M X 8 DDR DRAM, 0.5 ns, PBGA64 |
| 封裝： | MICRO, BGA-64 |
| 文件頁數(shù)： | 23/66頁 |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5108GBSA-5A-E |
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EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
23
Current state
Write recovering
with
auto precharge
/CS
/RAS /CAS /WE
Address
Command
Operation
Note
H
×
×
×
×
DESL
Nop -> Enter bank active after tWR
L
H
H
H
×
NOP
Nop -> Enter bank active after tWR
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Refresh
H
×
×
×
×
DESL
Nop -> Enter idle after tRFC
L
H
H
H
×
NOP
Nop -> Enter idle after tRFC
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
Mode register
accessing
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
H
×
×
×
×
DESL
Nop -> Enter idle after tMRD
L
H
H
H
×
NOP
Nop -> Enter idle after tMRD
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE5104GBSA | 512M bits DDR-II SDRAM |
| EDE5108ABSE | 512M bits DDR2 SDRAM |
| EDE5108AESK | 512M bits DDR2 SDRAM |
| EDE5108GBSA | 512M bits DDR-II SDRAM |
| EDE5104AESK | 512M bits DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE5116ABSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5116ABSE-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5116ABSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5116AFSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM (32M words x 16 bits) |
| EDE5116AFSE-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM (32M words x 16 bits) |
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