參數(shù)資料
型號(hào)： EDE5104GBSA-5A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80%
中文描述： 128M X 4 DDR DRAM, 0.5 ns, PBGA64
封裝： MICRO, BGA-64
文件頁(yè)數(shù)： 8/66頁(yè)
文件大小： 697K
代理商： EDE5104GBSA-5A-E
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
8
max.
×
4
Parameter
Symbol Grade
×
8
×
16
Unit Test condition
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Self Refresh Mode;
CK and /CK at 0V;
CKE
≤
0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
all bank interleaving reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = tRCD (IDD)
1
×
tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tRCD = 1
×
tCK (IDD);
CKE is H, CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
Auto-refresh current
IDD5
-5C
-4A
250
230
250
230
250
230
mA
Self-refresh current
IDD6
6
6
6
mA
Operating current
(Bank interleaving)
IDD7
-5C
-4A
300
280
320
300
500
480
mA
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD
values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN
≤
VIL (AC) (max.)
H is defined as VIN
≥
VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-533
DDR2-400
Parameter
4-4-4
3-3-3
Unit
CL(IDD)
4
3
tCK
tRCD(IDD)
15
15
ns
tRC(IDD)
55
55
ns
tRRD(IDD)-
×
4/
×
8
7.5
7.5
ns
tRRD(IDD)-
×
16
10
10
ns
tCK(IDD)
3.75
5
ns
tRAS(min.)(IDD)
40
40
ns
tRAS(max.)(IDD)
70000
70000
ns
tRP(IDD)
15
15
ns
tRFC(IDD)
105
105
ns
相關(guān)PDF資料
PDF描述
EDE5108GBSA-5A-E INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC
EDE5104GBSA 512M bits DDR-II SDRAM
EDE5108ABSE 512M bits DDR2 SDRAM
EDE5108AESK 512M bits DDR2 SDRAM
EDE5108GBSA 512M bits DDR-II SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE5108ABSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108ABSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108ABSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108ABSE-AE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM
EDE5108ABSE-AE-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM
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