參數(shù)資料
型號(hào)： EDE5104GBSA-5A-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80%
中文描述： 128M X 4 DDR DRAM, 0.5 ns, PBGA64
封裝： MICRO, BGA-64
文件頁(yè)數(shù)： 29/66頁(yè)
文件大?。?/td> 697K
代理商： EDE5104GBSA-5A-E
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
29
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self-
refresh operation and is automatically re-enabled upon exit of self-refresh operation. Any time the DLL is enabled
(and subsequently reset), 200 clock cycles must occur before a read command can be issued to allow time for the
internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a
violation of the tAC or tDQSCK parameters.
EMRS(2) Programming: Reserved
*1
Note : 1. EMRS(2) is reserved for future use and all bits except BA0 and BA1 must be programmed
to 0 when setting the mode register during initialization.
Address field
Extended mode register (2)
0*
1
A13
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
1
BA1 BA0
A12
EMRS(2)
EMRS(3) Programming: Reserved
*1
Extended Mode Register(3)
0*
1
1
1
Address Field
A13
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1 BA0
A12
Note : 1. EMRS (3) is reserved for future use and all bits except BA0 and BA1 must be programmed
to 0 when setting the mode register during initialization.
EMRS(3)
相關(guān)PDF資料
PDF描述
EDE5108GBSA-5A-E INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC
EDE5104GBSA 512M bits DDR-II SDRAM
EDE5108ABSE 512M bits DDR2 SDRAM
EDE5108AESK 512M bits DDR2 SDRAM
EDE5108GBSA 512M bits DDR-II SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE5108ABSE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108ABSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108ABSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM
EDE5108ABSE-AE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM
EDE5108ABSE-AE-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM
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