- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384280 > EDE5104GBSA-5A-E (ELPIDA MEMORY INC) RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% PDF資料下載
參數(shù)資料
| 型號： | EDE5104GBSA-5A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | RxxPxx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 3.3V; Power: 1W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| 中文描述： | 128M X 4 DDR DRAM, 0.5 ns, PBGA64 |
| 封裝： | MICRO, BGA-64 |
| 文件頁數(shù)： | 45/66頁 |
| 文件大?。?/td> | 697K |
| 代理商： | EDE5104GBSA-5A-E |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁當(dāng)前第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
EDE5104ABSE, EDE5108ABSE, EDE5116ABSE
Data Sheet E0323E90 (Ver. 9.0)
45
WRIT
NOP
WRIT
CK
/CK
T0
T2
T4
T6
T8
T10
T1
T3
T5
T7
T9
T11
Command
DQS, /DQS
DQ
NOP
WL = 3
Burst interrupt is only
allowed at this timing.
Write Interrupt by Write (WL = 3, BL = 8)
in
A0
in
A1
in
A2
in
A3
in
B0
in
B1
in
B2
in
B3
in
B4
in
B5
in
B6
in
B7
A
B
Notes :1. Write burst interrupt function is only allowed on burst of 8. Burst interrupt of 4 is prohibited.
2. Write burst of 8 can only be interrupted by another write command. Write burst interruption by read
command or precharge command is prohibited.
3. Write burst interrupt must occur exactly two clocks after previous write command. Any other write burst
interrupt timings are prohibited.
4. Write burst interruption is allowed to any bank inside DRAM.
5. Write burst with auto precharge enabled is not allowed to interrupt.
6. Write burst interruption is allowed by another write with auto precharge command.
7. All command timings are referenced to burst length set in the mode register. They are not referenced to
actual burst. For example, minimum write to precharge timing is WL+BL/2+tWR where tWR starts with
the rising clock after the un-interrupted burst end and not from the end of actual burst end.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE5108GBSA-5A-E | INNOLINE: Rxx-100_150A - Compact High Voltage Power Supplies - 5 Watt in Low Profile DIP24 Package - 3000VDC Isolation - Remote Voltage Programming by External Voltage or Resistance - Continuous Short Circuit Protection - Cascadeable to generate Output Voltages of up to 420VDC |
| EDE5104GBSA | 512M bits DDR-II SDRAM |
| EDE5108ABSE | 512M bits DDR2 SDRAM |
| EDE5108AESK | 512M bits DDR2 SDRAM |
| EDE5108GBSA | 512M bits DDR-II SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE5108ABSE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108ABSE-4A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108ABSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM |
| EDE5108ABSE-AE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM |
| EDE5108ABSE-AE-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR2 SDRAM for HYPER DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。