參數(shù)資料
型號(hào)： EDD1232ABBH
廠商： Elpida Memory, Inc.
英文描述： 128M bits DDR SDRAM
中文描述： 128兆位DDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 5/51頁(yè)
文件大?。?/td> 518K
代理商： EDD1232ABBH
EDD1232ABBH
Data Sheet E0874E40 (Ver. 4.0)
5
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 200 μs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +3.6
V
Supply voltage relative to VSS
VDD
–1.0 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°
C
Storage temperature
Tstg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to +70
°
C)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD,
VDDQ
VSS,
VSSQ
2.375
2.5
2.625
V
1
0
0
0
V
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable DC execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5
×
VDDQ
0.2V
0.5
×
VDDQ
0.5
×
VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
V
5, 6
相關(guān)PDF資料
PDF描述
EDD1232ABBH-5C-E 128M bits DDR SDRAM
EDD2504AKTA-6B-E 256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-7A-E 256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA 256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-6B 256M bits DDR SDRAM (64M words x 4 bits)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDD1232ABBH-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM
EDD1232ACBH 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM
EDD1232ACBH-5B-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM
EDD1232ACBH-6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM
EDD1232ACBH-6B-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*