參數(shù)資料
型號: EDD1232ABBH
廠商: Elpida Memory, Inc.
英文描述: 128M bits DDR SDRAM
中文描述: 128兆位DDR SDRAM內(nèi)存
文件頁數(shù): 36/51頁
文件大小: 518K
代理商: EDD1232ABBH
EDD1232ABBH
Data Sheet E0874E40 (Ver. 4.0)
36
A Read command to the consecutive Precharge command interval (same bank): To output all data
To complete a burst read operation and get a burst length of data, the consecutive precharge command must be
issued tRPD (= BL/ 2 cycles) after the read command is issued.
out0 out1 out2 out3
CK
/CK
DQ
DQS
Command
t1
t0
t2
t3
t4
t5
t6
t7
t8
tRPD = BL/2
READ
NOP
NOP
NOP
PRE/
PALL
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)
READ to PRECHARGE Command Interval (same bank): To stop output data
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP
(= CL) after the precharge command.
out0 out1
CK
/CK
DQ
DQS
Command
t1
t0
t2
t3
t4
t5
t6
t7
t8
High-Z
High-Z
tHZP
CL = 3
READ
NOP
NOP
PRE/PALL
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 2, 4, 8)
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