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參數(shù)資料
| 型號： | EDD1232AAFA-7A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 128M bits DDR SDRAM (4M words x 32 bits) |
| 中文描述： | 4M X 32 DDR DRAM, 0.75 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, PLASTIC, LQFP-100 |
| 文件頁數(shù)： | 24/50頁 |
| 文件大?。?/td> | 621K |
| 代理商： | EDD1232AAFA-7A-E |
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EDD1232AABH
Data Sheet E0533E50 (Ver. 5.0)
24
Read/Write Operations
Bank active
A read or a write operation begins with the bank active command [ACT]. The bank active command determines a
bank address and a row address. For the bank and the row, a read or a write command can be issued tRCDRD or
tRCDWR after the ACT is issued.
Read operation
The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read
command is issued. The burst length (BL) determines the length of a sequential output data by the read command
that can be set to 2, 4, or 8. The starting address of the burst read is defined by the column address, the bank select
address which are loaded via the A0 to A11 and BA0, BA1 pins in the cycle when the read command is issued. The
data output timing are characterized by CL and tAC. The read burst start CL
tCK + tAC (ns) after the clock rising
edge where the read command are latched. The DDR SDRAM output the data strobe through DQS simultaneously
with data. tRPRE prior to the first rising edge of the data strobe, the DQS are driven Low from VTT level. This low
period of DQS is referred as read preamble. The burst data are output coincidentally at both the rising and falling
edge of the data strobe. The DQ pins become High-Z in the next cycle after the burst read operation completed.
tRPST from the last falling edge of the data strobe, the DQS pins become High-Z. This low period of DQS is
referred as read postamble.
out0 out1
out0 out1 out2 out3
out0 out1 out2 out3
out4 out5 out6 out7
CK
/CK
Address
DQS
DQ
BL = 2
BL = 4
BL = 8
Command
CL = 2
BL: Burst length
t1
t0
t5
t4
t6
t7
t8
t9
tRCDRD
tRPRE
tRPST
ACT
NOP
NOP
NOP
READ
Row
Column
Read Operation (Burst Length)
相關(guān)PDF資料 |
PDF描述 |
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| EDD1232AABH-7A-E | GT 3C 3#16S PIN PLUG |
| EDD1232ABBH | 128M bits DDR SDRAM |
| EDD1232ABBH-5C-E | 128M bits DDR SDRAM |
| EDD2504AKTA-6B-E | 256M bits DDR SDRAM (64M words x 4 bits) |
| EDD2504AKTA-7A-E | 256M bits DDR SDRAM (64M words x 4 bits) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDD1232ABBH | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM |
| EDD1232ABBH-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM |
| EDD1232ACBH | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM |
| EDD1232ACBH-5B-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM |
| EDD1232ACBH-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM |
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