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參數(shù)資料
| 型號： | DS1225Y-200 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 125K |
| 代理商： | DS1225Y-200 |
MAX381/MAX383/MAX385
Precision, Low-Voltage Analog Switches
_______________________________________________________________________________________
5
ELECTRICAL CHARACTERISTICS—Single +5V Supply (continued)
(V+ = +5V ±10%, V- = 0V, GND = 0V, VINH = 2.4V, VINL = 0.8V, TA = TMIN to TMAX, unless otherwise noted.)
ELECTRICAL CHARACTERISTICS—Single +3.3V Supply
(V+ = 3.0V to 3.6V, GND = 0V, VINH = 2.4V, VINL = 0.8V, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
MIN
TYP
MAX
(Note 2)
UNITS
Turn-On Time
ON
160
250
ns
CONDITIONS
VCOM = 3V, Figure 2
Turn-Off Time
tOFF
ns
Positive Supply Current
I+
-1.0
0.01
1.0
A
VCOM = 3V, Figure 2
All channels on or off, VIN = 0V or V+,
V+ = 5.5V, V- = 0V
60
125
PARAMETER
SYMBOL
MIN
TYP
MAX
(Note 2)
UNITS
Analog Signal Range
VCOM,
VNO,
VNC
0V
V+
V
CONDITIONS
(Note 3)
On-Resistance
RON
75
185
V+ = 3V, V- = 0V,
VNC or VNO = 1.5V,
ICOM = 1.0mA,
VINH = 2.4V,
VINL = 0.8V
-0.2
-0.04
0.2
M
TA = +25°C
C, E
-5.0
5.0
NC or NO Off Leakage
Current (Note 8)
INC(OFF)
or
INO(OFF)
-0.2
-0.01
0.2
nA
VCOM = 0V,
VNC or VNO = 3V,
V+ = 3.6V, V- = 0V
COM Off Leakage Current
(Note 8)
ICOM(OFF)
-0.2
-0.01
0.2
nA
VCOM = 3V,
VNC or VNO = 0V,
V+ = 3.6V, V- = 0V
COM On Leakage Current
(Note 8)
ICOM(ON)
-0.4
-0.04
0.4
nA
VCOM = 3V,
VNC or VNO = 3V,
V+ = 3.6V, V- = 0V
-2.5
2.5
-20.0
20.0
-2.5
2.5
-5.0
5.0
TA = TMIN
to TMAX
TA = TMIN
to TMAX
TA = TMIN
to TMAX
C, E
M
C, E
M
C, E
M
-5.0
5.0
C, E
M
TA = +25°C
C, E
M
-0.1
-0.01
0.1
-0.1
-0.01
0.1
C, E
TA = TMIN
to TMAX
TA = +25°C
M
C, E, M
250
175
SWITCH
TEMP.
RANGE
Power-Supply Range
V+
V
2.7
16
Break-Before-Make Time
Delay (Note 3)
tD
10
20
ns
MAX383 only
Charge Injection
(Note 3)
VCTE
pC
CL = 1.0nF, VGEN = 0V,
RGEN = 0
25
TA = +25°C
TA = TMIN to TMAX
300
175
Negative Supply Current
I-
-1.0
-0.01
1.0
A
All channels on or off, VIN = 0V or V+,
V+ = 5.5V, V- = 0V
DYNAMIC
SUPPLY
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| DS1225Y-200+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225Y-200IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225Y-200-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64K Nonvolatile SRAM |
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