參數(shù)資料
型號(hào): DS1225Y-200
廠(chǎng)商: DALLAS SEMICONDUCTOR
元件分類(lèi): Static RAM
英文描述: 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 125K
代理商: DS1225Y-200
MAX381/MAX383/MAX385
Precision, Low-Voltage Analog Switches
_______________________________________________________________________________________
7
01
3
25
ON-RESISTANCE vs. VCOM AND
TEMPERATURE (SINGLE SUPPLY)
MAX381/3/5-04
VCOM (V)
R
ON
(
)
4
10
70
60
50
40
30
20
TA = +85°C
TA = +25°C
TA = -55°C
TA = +125°C
V+ = 5V
V- = 0V
0
0.0001
-75
OFF LEAKAGE CURRENT vs.
TEMPERATURE
10
MAX381-05
TEMPERATURE (°C)
OFF
LEAKAGE
(nA)
+25
+125
0.1
0.001
1
0.01
100
V+ = 5.5V, V- = -5.5V
-25
+75
0.0001
-75
ON LEAKAGE CURRENT vs.
TEMPERATURE
10
MAX381-06
TEMPERATURE (°C)
ON
LEAKAGE
(nA)
+25
+125
0.1
0.001
1
0.01
100
V+ = 5.5V, V- = -5.5V
-25
+75
-5
-3
1
-1
5
CHARGE INJECTION
vs. VCOM
MAX381/3/5-07
VCOM (V)
Q
(pC)
3
-4
-2
2
04
-20
30
20
10
0
-10
-30
V+ = 5V
V- = -5V
V+ = 5V
V- = 0V
0.0001
-75
SUPPLY CURRENT vs. TEMPERATURE
10
MAX381-08
TEMPERATURE (°C)
I+,
I-
(
A)
+25
+125
0.1
0.001
1
0.01
100
I- at V- = -5.5V
I+ at V+ = 5.5V
0.00001
0.001
0.01
0.1
1
10
100 1000
MAX383 SUPPLY CURRENT vs. LOGIC INPUT
FREQUENCY (BOTH INPUTS DRIVEN)
MAX381/3/5-09
INPUT FREQUENCY (kHz)
SUPPLY
CURRENT
(
A)
0.0001
0.001
1000
100
10
1
0.1
0.01
0.0001
0.00001
V+ = 5V
V+ = 3V
____________________________Typical Operating Characteristics (continued)
(TA = +25°C, unless otherwise noted.)
01
3
25
MAX383 SUPPLY CURRENT vs. LOGIC
INPUT VOLTAGE (BOTH INPUTS DRIVEN)
MAX381/3/5-10
VIN (V)
SUPPLY
CURRENT
(
A)
4
0.5
1.5
3.5
2.5
4.5
0.001
1000
100
10
1
0.1
0.01
0.0001
V+ = 3V
V+ = 5V
相關(guān)PDF資料
PDF描述
DS1230AB-120 32K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA28
DS1230AB-150 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA28
DS1230AB-100 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA28
DS1230ABP-70 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
DS1230Y-70 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DS1225Y-200+ 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1225Y-200IND 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1225Y-200-IND 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:64K Nonvolatile SRAM
DS1225Y-200IND+ 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線(xiàn)寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪(fǎng)問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
DS1227 制造商:DALLAS 制造商全稱(chēng):Dallas Semiconductor 功能描述:KickStarter Chip