- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄97858 > DS1225Y-200 (DALLAS SEMICONDUCTOR) 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 PDF資料下載
參數(shù)資料
| 型號(hào)： | DS1225Y-200 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 125K |
| 代理商： | DS1225Y-200 |
MAX381/MAX383/MAX385
Precision, Low-Voltage Analog Switches
2
_______________________________________________________________________________________
Voltage Referenced to GND
V+ .......................................................................-0.3V to +17V
V- ........................................................................+0.3V to -17V
V+ to V-...............................................................-0.3V to +17V
COM_, NO_, NC_, IN_ ................(V- - 2V) to (V+ + 2V) or 30mA,
whichever occurs first
Continuous Current, any pin ...............................................30mA
Peak Current, any pin
(pulsed at 1ms, 10% duty cycle max) ..........................100mA
Continuous Power Dissipation (TA = +70°C)
Plastic DIP (derate 10.53mW/°C above+70°C) ...........842mW
Narrow SO (derate 8.70mW/°C above +70°C) ............696mW
CERDIP (derate 10.00mW/°C above +70°C) ...............800mW
Operating Temperature Ranges
MAX38_C_ E .......................................................0°C to +70°C
MAX38_E_ E ....................................................-40°C to +85°C
MAX38_MJE ..................................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10sec) .............................+300°C
ELECTRICAL CHARACTERISTICS—Dual Supplies
(V+ = +5V ±10%, V- = -5V ±10%, GND = 0V, VINH = 2.4V, VINL = 0.8V, TA = TMIN to TMAX, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:
Signals on NC, NO, COM, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward diode current to
maximum current rating.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
TYP
MAX
(Note 2)
UNITS
On-Resistance
RON
C, E, M
20
35
0.5
2
On-Resistance Match Between
Channels (Note 4)
RON
Analog Signal Range
VCOM,
VNO,
VNC
V-
V+
V
On-Resistance Flatness
(Note 4)
RFLAT(ON)
4
-0.2
-0.01
0.2
NC or NO Off Leakage Current
(Note 5)
INC(OFF)
or
INO(OFF)
nA
-2.5
2.5
VNC or VNO = 3V, 0V,
-3V; ICOM = -10mA,
V+ = 5V; V- = -5V
V+ = 4.5V, V- = -4.5V,
VNC or VNO = ±3.5V,
ICOM = -10mA,
VINH = 2.4V,
VINL = 0.8V
VNC or VNO = ±3V,
ICOM = -10mA,
V+ = 5V, V- = -5V
VCOM = ±4.5V,
VNC or VNO = +4.5V,
V+ = 5.5V,V- = -5.5V
(Note 3)
TA =
+25°C
TA =
+25°C
TA =
+25°C
TA = TMIN
to TMAX
TA =
+25°C
TA = TMIN
to TMAX
C, E
TA = TMIN
to TMAX
TA = TMIN
to TMAX
M
4
6
-5.0
5.0
C, E
M
20
30
CONDITIONS
TEMP.
RANGE
C, E, M
C, E
-0.1
-0.01
0.1
M
-0.2
-0.01
0.2
COM Off Leakage Current
(Note 5)
ICOM(OFF)
nA
-2.5
2.5
VCOM = ±4.5V,
VNC or VNO = +4.5V,
V+ = 5.5V, V- = -5.5V
TA =
+25°C
TA = TMIN
to TMAX
C, E
M
-5.0
5.0
C, E
-0.1
-0.01
0.1
M
-0.4
-0.04
0.4
COM On Leakage Current
(Note 5)
ICOM(ON)
nA
-5.0
5.0
VCOM = ±4.5V,
VNC or VNO = ±4.5V,
V+ = 5.5V, V- = -5.5V
TA =
+25°C
TA = TMIN
to TMAX
C, E
M
-20.0
20.0
C, E
-0.2
-0.04
0.2
M
SWITCH
45
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230AB-120 | 32K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA28 |
| DS1230AB-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA28 |
| DS1230AB-100 | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA28 |
| DS1230ABP-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1230Y-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1225Y-200+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225Y-200IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1225Y-200-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64K Nonvolatile SRAM |
| DS1225Y-200IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1227 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:KickStarter Chip |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。