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參數(shù)資料
| 型號： | DRV591GQE |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 4/19頁 |
| 文件大小： | 256K |
| 代理商： | DRV591GQE |
DRV591
SLOS389
–
NOVEMBER 2001
4
www.ti.com
AVAILABLE OPTIONS
PACKAGED DEVICES
TA
PowerPAD QUAD FLATPACK
(VFP)
PLASTIC BALL GRID ARRAY
MicroStar Junior
(GQE)
–
40
°
C to 85
°
C
§
Tape and reel transport media is in the Product Preview stage of development
DRV591VFP
§
DRV591GQE
recommended operating conditions
MIN
MAX
UNIT
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High-level input voltage, VIH
FREQ, INT/EXT, SHUTDOWN, COSC
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2.8
2
–
40
5.5
V
ááá
V
Low-level input voltage, VIL
Operating free-air temperature, TA
0.8
V
°
C
FREQ, INT/EXT, SHUTDOWN, COSC
85
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
|VOO|
Output offset voltage (measured
differentially)
VI = VDD/2,
IO = 0 A
14
100
mV
|IIH|
|IIL|
V
n
High-level input current
VDD = 5.5V,
VDD = 5.5V,
f = <1 Hz to 10 kHz
VI = VDD
VI = 0 V
1
μ
A
μ
A
μ
V
Low-level input current
1
Integrated output noise voltage
40
VICM
Common mode voltage range
Common-mode voltage range
VDD = 5 V
VDD = 3.3 V
1.2
3.8
V
1.2
2.1
Av
Closed-loop voltage gain
2.1
2.34
2.6
V/V
Full power bandwidth
60
kHz
VO
Voltage output (measured differentially)
IO =
±
1 A, rds(on) = 65 m
, VDD = 5 V
IO =
±
3 A, rds(on) = 65 m
, VDD = 5 V
VDD = 5 V, IO = 4 A,
TA = 25
°
C
4.87
V
4.61
High side
25
60
95
m
rDS(on)
Drain source on state resistance
Drain-source on-state resistance
Low side
25
65
95
VDD = 3.3 V, IO = 4 A,
TA = 25
°
C
High side
25
80
140
m
Low side
25
90
140
Maximum continuous current output
3
A
Status flag output pins (FAULT0, FAULT1)
Fault active (open drain output)
Sinking 200
μ
A
0.1
V
External clock frequency range
For 500 kHz operation
225
250
275
kHz
For 100 kHz operation
45
50
55
Iq
Quiescent current
VDD = 5 V, No load or filter
VDD = 3.3 V, No load or filter
VDD = 5 V, SHUTDOWN = 0.8 V
SHUTDOWN = 0.8 V
2
6.2
12
mA
2
4.6
8
Iq(SD)
Quiescent current in shutdown mode
0
0.1
50
μ
A
k
V
Output resistance in shutdown
2
Power-on threshold
1.7
2.8
Power-off threshold
1.6
2.6
V
°
C
k
Thermal trip point
FAULT0 active
130
ZI
Input impedance (IN+, IN
–
)
100
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DRV591VFP | 功能描述:功率驅動器IC High Efficiency PWM Power Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| DRV591VFP(1) | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-A HIGH-EFFICIENCY PWM POWER DRIVER |
| DRV591VFP | 制造商:Texas Instruments 功能描述:PWM POWER DRIVER SMD HLQFP32 591 |
| DRV591VFP1 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3-A HIGH-EFFICIENCY PWM POWER DRIVER |
| DRV591VFPG4 | 功能描述:功率驅動器IC High Efficiency PWM Power Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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