參數(shù)資料
型號(hào): DD28F032SA-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
中文描述: 4M X 8 FLASH 12V PROM, 150 ns, PDSO56
封裝: 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56
文件頁(yè)數(shù): 37/49頁(yè)
文件大?。?/td> 1402K
代理商: DD28F032SA-150
E
6.9 AC Characteristics for CE
X
#
—Controlled Command Write Operations
(1)
V
CC
= 3.3V ± 0.3V, T
A
= 0°C to +70°C
Versions
DD28F032SA
37
DD28F032SA-150
Symbol
Parameter
Notes
Min
Typ
Max
Unit
t
AVAV
Write Cycle Time
150
ns
t
VPEH
V
PP
Setup to CE
X
# Going High
3
100
ns
t
PHWL
RP# Setup to WE# Going Low
480
ns
t
WLEL
WE# Setup to CE
X
# Going Low
0
ns
t
AVEH
Address Setup to CE
X
# Going High
2,6
75
ns
t
DVEH
Data Setup to CE
X
# Going High
2,6
85
ns
t
ELEH
CE
X
# Pulse Width
75
ns
t
EHDX
Data Hold from CE
X
# High
2
10
ns
t
EHAX
Address Hold from CE
X
# High
2
10
ns
t
EHWH
WE# Hold from CE
X
# High
10
ns
t
EHEL
CE
X
# Pulse Width High
75
ns
t
GHEL
Read Recovery before Write
0
ns
t
EHRL
CE
X
# High to RY/BY# Going Low
100
ns
t
RHPL
RP# Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/BY# High
3
0
ns
t
PHEL
RP# High Recovery to CE
X
# Going Low
1
μs
t
EHGL
Write Recovery before Read
120
ns
t
QVVL
V
PP
Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY/BY# High
0
μs
t
EHQV
1
Duration of Word/Byte Program Operation
4,5
5
9
Note 7
μs
t
EHQV
2
Duration of Block Erase Operation
4
0.3
10
sec
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