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參數(shù)資料
| 型號： | DD28F032SA-150 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| 中文描述： | 4M X 8 FLASH 12V PROM, 150 ns, PDSO56 |
| 封裝： | 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56 |
| 文件頁數(shù)： | 13/49頁 |
| 文件大?。?/td> | 1402K |
| 代理商： | DD28F032SA-150 |
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E
DD28F032SA
13
5.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
5.1 Bus Operations for Word-Wide Mode (BYTE# = V
IH
)
Mode
Notes
RP#
CE
X
#
(8)
CE
0
#
OE#
WE#
A
1
DQ
0
–15
RY/BY#
Read
1,2,7
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
X
Output Disable
1,6,7
V
IH
V
IL
V
IL
V
IH
V
IH
X
High Z
X
Standby
1,6,7
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
High Z
X
Deep Power-Down
1,3
V
IL
X
X
X
X
X
High Z
V
OH
Manufacturer ID
4
V
IH
V
IL
V
IL
V
IL
V
IH
V
IL
0089H
V
OH
Device ID
4
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
66A0H
V
OH
Write
1,5,6
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
5.2 Bus Operations for Byte-Wide Mode (BYTE# = V
IL
)
Mode
Notes
RP#
CE
X
#
(8)
CE
0
#
OE#
WE#
A
0
DQ
0–7
RY/BY#
Read
1,2,7
V
IH
V
IL
V
IL
V
IL
V
IH
X
D
OUT
X
Output Disable
1,6,7
V
IH
V
IL
V
IL
V
IH
V
IH
X
High Z
X
Standby
1,6,7
V
IH
V
IL
V
IH
V
IH
V
IH
V
IL
V
IH
X
X
X
High Z
X
Deep Power-Down
1,3
V
IL
X
X
X
X
X
High Z
V
OH
Manufacturer ID
4
V
IH
V
IL
V
IL
V
IL
V
IH
V
IL
89H
V
OH
Device ID
4
V
IH
V
IL
V
IL
V
IL
V
IH
V
IH
A0H
V
OH
Write
1,5,6
V
IH
V
IL
V
IL
V
IH
V
IL
X
D
IN
X
NOTES:
1. X can be V
IH
or V
IL
for address or control pins except for RY/BY#, which is either V
OL
or V
OH
.
2. RY/BY# output is open drain. When the WSM is ready, block erase is suspended or the device is in deep power-down
mode, RY/BY# will be at V
OH
if it is tied to V
CC
through a resistor. RY/BY# at V
OH
is independent of OE# while a WSM
operation is in progress.
3.
RP# at GND ± 0.2V ensures the lowest deep power-down current.
4. A
and A
at V
provide device manufacturer codes in x8 and x16 modes respectively. A
0
and A
1
at V
IH
provide device ID
codes in x8 and x16 modes respectively. All other addresses are set to zero.
5. Commands for different block erase operations, data program operations or lock-block operations can only be successfully
completed when V
PP
= V
PPH
.
6. While the WSM is running, RY/BY# in level-mode (default) stays at V
OL
until all operations are complete. RY/BY# goes to
V
OH
when the WSM is not busy or in erase suspend mode.
7. RY/BY# may be at V
while the WSM is busy performing various operations; for example, a Status Register read during a
data program operation.
8. CE
X
# = CE
1
# or CE
2
#.
相關PDF資料 |
PDF描述 |
|---|---|
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| DD28F032SA70 | x8/x16 Flash EEPROM |
| DD28F032SA | 32-Mbit (2 Mbit x 16,4 Mbit x 8) FlashFile Memory(32-M位 (2 M位 x 16,4 M位 x 8) FlashFile存儲器) |
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相關代理商/技術參數(shù) |
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|---|---|
| DD28F032SA70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-70 | 制造商:Intel 功能描述:4M X 8 FLASH 3V PROM, 70 ns, 56 Pin Plastic SMT |
| D-D2A | 制造商:Leach International Corporation 功能描述:LATCHING RELAY - Bulk |
| DD2-B0-24-415-1G2-C | 制造商:Carling Technologies 功能描述:D-SERIES CIRCUIT BREAKER - Bulk |
| DD2-B0-24-625-1G2-C | 制造商:Carling Technologies 功能描述:D-SERIES CIRCUIT BREAKER - Bulk |
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