| 型號(hào) | 廠商 | 描述 |
| 2sj216 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj218 2 3 |
TRANSISTOR TO 247 MOSFET ISOLIERT | |
| 2sj219(l) 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj219(s) 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB | |
| 2sj219l 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj219s 2 3 |
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| 2sj214(l) 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-262AA | |
| 2sj220(l) 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj220(s) 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB | |
| 2sj223l 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj223s 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR | |
| 2sj225 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj226 2 3 |
Sanyo Electric Co.,Ltd. | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Housing; For Discrete wire; Crimping |
| 2sj227 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj228 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj229 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj230 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj231 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj232 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj233 2 3 |
Sanyo Electric Co.,Ltd. | Very High-Speed Switching Applications |
| 2sj234(l) 2 3 4 5 6 7 8 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj234(s) 2 3 4 5 6 7 8 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | TO-252VAR | |
| 2sj234l 2 3 4 5 6 7 8 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj234s 2 3 4 5 6 7 8 |
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| 2sj238 2 3 4 5 6 7 8 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj234 2 3 4 5 6 7 8 |
Hitachi,Ltd. | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2sj234l 2 3 4 5 6 7 8 |
Hitachi,Ltd. | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2sj234s 2 3 4 5 6 7 8 |
Hitachi,Ltd. | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2sj240 2 3 4 5 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-186 | |
| 2sj241 2 3 4 5 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj242l 2 3 4 5 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-251VAR | |
| 2sj242s 2 3 4 5 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj245(l) 2 3 4 5 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA | |
| 2sj245(s) 2 3 4 5 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj246(l) 2 3 4 5 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7A I(D) | TO-251AA | |
| 2sj246(s) 2 3 4 5 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj243 2 3 4 5 6 |
NEC Corp. | P-CHANNEL MOS FET FOR SWITCHING |
| 2sj246s 2 3 4 5 6 7 8 |
Hitachi,Ltd. | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2sj257fd 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj259fd 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-263VAR | |
| 2sj266fd 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-263AB | |
| 2sj268fd 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj268 2 3 4 |
Sanyo Electric Co.,Ltd. | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(用于超高速轉(zhuǎn)換應(yīng)用的P溝道MOSFET) |
| 2sj273 2 3 4 |
Sanyo Electric Co.,Ltd. | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET) |
| 2sj275fd 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj277fd 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-263AB | |
| 2sj279 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj279(l) 2 3 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA | |
| 2sj279(s) 2 3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset | |
| 2sj277 2 3 4 |
Sanyo Electric Co.,Ltd. | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉(zhuǎn)換應(yīng)用P溝道硅MOSFET) |