參數(shù)資料
型號(hào)： 2SJ243
廠商： NEC Corp.
英文描述： P-CHANNEL MOS FET FOR SWITCHING
中文描述： P溝道MOS場(chǎng)效應(yīng)管的開(kāi)關(guān)
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 61K
代理商： 2SJ243
2SJ243
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= –30 V, V
GS
= 0
–1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
5 V, V
DS
= 0
±
0.1
±
3.0
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= –3 V, I
D
= –10
μ
A
–1.6
–1.9
–2.3
V
Forward Transfer Admittance
|y
fs
|
V
DS
= –3 V, I
D
= 10 mA
20
30
mS
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= –2.5 V, I
D
= –1 mA
55
100
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= –4.0 V, I
D
= –10 mA
20
25
Input Capacitance
C
iss
V
DS
= –5.0 V, V
GS
= 0, f = 1 MHz
16
pF
Output Capacitance
C
oss
13
pF
Reverse Transfer Capacitance
C
rss
2
pF
Turn-On Delay Time
t
d(on)
V
DD
= –5V, I
D
= –10 mA
V
GS(on)
= –5 V, R
G
= 10
10
ns
Rise Time
t
r
40
ns
Turn-Off Delay Time
t
d(off)
R
L
= 500
130
ns
Fall Time
t
f
80
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
PG.
R
G
0
V
GS
DUT
R
L
V
DD
τ
= 1 s
Duty cycle
≤
1 %
Gate
Voltage
Waveform
Drain
Current
Waveform
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ243-T1(A) 制造商:Renesas Electronics 功能描述:Pch -30V }100mA 25 SC75 制造商:Renesas Electronics 功能描述:Pch -30V }100mA 25 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R
2SJ243-T1-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,0.1A,55ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R
2SJ244 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ244JYTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ244JYTR-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
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