參數(shù)資料
型號(hào): CPV363M4KPBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 電源模塊
英文描述: Trans IGBT Module N-CH 600V 11A 13-Pin IMS-2
中文描述: IGBT Transistors 600 Volt 6.0 Amp
文件頁(yè)數(shù): 9/11頁(yè)
文件大小: 246K
代理商: CPV363M4KPBF
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
7
Document Number: 94485
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 15 - Typical Recovery Current vs. dIF/dt
Fig. 16 - Typical Stored Charge vs. dIF/dt
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
0
40
80
120
160
0
1
0
1
f
di /dt - (A/s)
t
-
(n
s
)
rr
I = 24A
I = 12A
I = 6.0A
F
V = 200V
T = 125°C
T = 25°C
R
J
1
10
100
0
1
0
1
f
di /dt - (A/s)
I
-
(A)
IR
R
M
I = 6.0A
I = 12A
I = 24A
F
V = 200V
T = 125°C
T = 25°C
R
J
0
200
400
600
0
1
0
1
f
di /dt - (A/s)
RR
Q
-
(nC
)
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
R
J
F
10
100
1000
10000
0
1
0
1
f
di /dt - (A/s)
d
i(rec)M/dt
-
(A/
s)
I = 12A
I = 24A
I = 6.0A
F
V = 200V
T = 125°C
T = 25°C
R
J
相關(guān)PDF資料
PDF描述
CPV363M4UPBF Trans IGBT Module N-CH 600V 11A 13-Pin IMS-2
CPV364M4FPBF Trans IGBT Module N-CH 600V 27A 13-Pin IMS-2
CPV364M4KPBF Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2
CPV364M4UPBF Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2
CR02A-2240
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