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參數(shù)資料
| 型號(hào)： | CPV363M4KPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 電源模塊 |
| 英文描述： | Trans IGBT Module N-CH 600V 11A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 6.0 Amp |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | CPV363M4KPBF |
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
5
Document Number: 94485
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
h
e
rm
a
lR
e
spo
n
se
(Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t
/ t
2. Peak T = P
x Z
+ T
12
J
DM
thJC
C
1
10
100
0
300
600
900
1200
1500
V
, Collector-to-Emitter Voltage (V)
C
,C
a
paci
tance
(
pF)
CE
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
G
a
te
-to
-E
m
itte
rV
o
lta
g
e
(V
)
G
GE
V
= 400V
I
= 6.0A
CC
C
R
0
10
20
30
40
50
0.0
0.2
0.4
0.6
0.8
1.0
R
, Gate Resistance (
Ω)
Tot
al
S
w
it
chi
ng
Losses
(
m
J)
G
V
= 480V
V
= 15V
T
= 25 C
I
= 6.0A
CC
GE
J
C
°
10
Ω
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Tot
a
lSw
it
chi
ng
Losses
(
m
J)
J
°
R
= 23
V
= 15V
V
= 480V
G
GE
CC
I = 12 A
C
I = 6 A
C
I = 3 A
C
Ω
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| CPV363M4U | 功能描述:IGBT SIP MODULE 600V 6.8A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CPV363M4UPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT SIP Module (Ultrafast IGBT) |
| CPV363MF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT |
| CPV363MK | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
| CPV363MM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated Fast IGBT |
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