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參數(shù)資料
| 型號： | CPV363M4KPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 電源模塊 |
| 英文描述： | Trans IGBT Module N-CH 600V 11A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 6.0 Amp |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 246K |
| 代理商： | CPV363M4KPBF |
CPV363M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
1
Document Number: 94485
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
Short circuit rated ultrafast: Optimized for high
speed over 5.0 kHz (see fig. 1 for current vs.
frequency curve), and short circuit rated to 10 μs
at 125 °C, VGE = 15 V
Fully isolated printed circuit board mount
package
Switching-loss rating includes all “tail” losses
HEXFRED soft ultrafast diodes
UL approved file E78996
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules.
These
modules
are
more
efficient
than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
IRMS per phase (1.94 kW total)
with TC = 90 °C
6.7 ARMS
TJ
125 °C
Supply voltage
360 VDC
Power factor
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 6.0 A, 25 °C
1.72 V
Package
SIP
Circuit
Three Phase Inverter
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
600
V
Continuous collector current, each IGBT
IC
TC = 25 °C
11
A
TC = 100 °C
6.0
Pulsed collector current
ICM
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
See fig. 20
22
A
Clamped inductive load current
ILM
CC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 22
See fig. 19
22
A
Diode continuous forward current
IF
TC = 100 °C
6.1
A
Diode maximum forward current
IFM
22
A
Short circuit withstand time
tSC
10
μs
Gate to emitter voltage
VGE
± 20
V
Isolation voltage
VISOL
Any terminal to case, t = 1 minute
2500
VRMS
Maximum power dissipation, each IGBT
PD
TC = 25 °C
36
W
TC = 100 °C
14
Operating junction and
storage temperature range
TJ, TStg
- 40 to + 150
°C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
300
Mounting torque
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf
in
(N
m)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPV363M4UPBF | Trans IGBT Module N-CH 600V 11A 13-Pin IMS-2 |
| CPV364M4FPBF | Trans IGBT Module N-CH 600V 27A 13-Pin IMS-2 |
| CPV364M4KPBF | Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2 |
| CPV364M4UPBF | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
| CR02A-2240 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPV363M4U | 功能描述:IGBT SIP MODULE 600V 6.8A IMS-2 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CPV363M4UPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:IGBT SIP Module (Ultrafast IGBT) |
| CPV363MF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT |
| CPV363MK | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
| CPV363MM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated Fast IGBT |
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