參數(shù)資料
型號： COP8SDR9IMT7
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 微控制器/微處理器
英文描述： 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout
中文描述： 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO48
封裝： TSSOP-48
文件頁數(shù)： 13/80頁
文件大小： 972K
代理商： COP8SDR9IMT7
8.0 Electrical Characteristics
DC Electrical Characteristics (40C
≤
T
A
≤
+85C)
(Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Output Current Levels
D Outputs
Source
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
7
4
10
3.5
mA
mA
mA
mA
Sink (Note 7)
All Others
Source (Weak Pull-Up Mode)
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
V
CC
= 5.5V
10
5
7
4
10
3.5
0.5
μA
μA
mA
mA
mA
mA
μA
mA
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note
5)
RAM Retention Voltage, V
R
(in HALT Mode)
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM (Note 8)
G6 Rise Time to Force Execution from Boot
ROM
Input Current on G6 when Input
>
V
CC
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
+0.5
15
±
200
mA
2.0
V
pF
pF
7
1000
G6 rise time must be slower
than 100 nS
2 x V
CC
V
CC
+ 7
V
100
nS
V
IN
= 11V, V
CC
= 5.5V
25C
See
Table 13
,
Typical Flash
Memory Endurance
500
100
μA
yrs
10
5
cycles
AC Electrical Characteristics (40C
≤
T
A
≤
+85C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C
)
Crystal/Resonator
4.5V
≤
V
CC
≤
5.5V
2.7V
≤
V
CC
<
4.5V
See
Table 13
,
Typical
Flash Memory
Endurance
0.5
1.5
DC
DC
μs
μs
Flash Memory Page Erase Time
1
ms
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
UWS
)
MICROWIRE/PLUS Hold Time (t
UWH
)
MICROWIRE/PLUS Output Propagation
Delay (t
UPD
)
Input Pulse Width
Interrupt Input High Time
Interrupt Input Low Time
8
ms
2
MHz
20
20
ns
ns
150
ns
1
1
t
C
t
C
C
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