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參數(shù)資料
| 型號： | CM100DU-24NFH |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MITSUBISHI IGBT MODULES |
| 中文描述： | 三菱IGBT模塊 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | CM100DU-24NFH |
Feb.2004
MITSUBISHI IGBT MODULES
CM100DU-24NFH
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
T
j
= 25
°
C
t
rr
I
rr
10
1
10
2
2
3
5
7
10
3
2
3
5
7
2
3
5
7
2
3
5
7
10
0
10
2
10
1
10
3
2
3
5
7
t
d(off)
t
d(on)
t
f
t
r
0
5
10
15
20
0
100 200 300 400 500 600 700
V
CC
= 600V
V
CC
= 400V
I
C
= 100A
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 3.1
T
j
= 125
°
C
Inductive load
Conditions:
V
CC
= 600V
V
GE
=
±
15V
R
G
= 3.1
T
j
= 25
°
C
Inductive load
10
–
3
10
–
5
10
–
4
10
0
7
5
3
2
10
–
2
7
5
3
2
10
–
1
7
5
3
2
10
–
3
2 3 57
2 3 57
2 3 57
2 3 57
10
1
10
–
2
10
–
1
10
0
10
–
3
10
–
3
5
3
2
10
–
2
5
3
2
10
–
1
2 3 57
2 3 57
Single Pulse
T
C
= 25
°
C
Per unit base =
R
th(j
–
c)
= 0.22
°
C/W
10
–
3
10
–
5
10
–
4
10
0
7
5
3
2
10
–
2
7
5
3
2
10
–
1
7
5
3
2
10
–
3
2 3 57
2 3 57
2 3 57
2 3 57
10
1
10
–
2
10
–
1
10
0
10
–
3
10
–
3
5
3
2
10
–
2
5
3
2
10
–
1
2 3 57
2 3 57
Single Pulse
T
C
= 25
°
C
Per unit base =
R
th(j
–
c)
= 0.47
°
C/W
10
1
10
2
7
2
3
5
10
3
7
2
3
5
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
TIME (s)
N
T
t
–
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
S
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
R
r
EMITTER CURRENT I
E
(A)
R
r
GATE CHARGE CHARACTERISTICS
(TYPICAL)
G
G
GATE CHARGE Q
G
(nC)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
N
T
t
–
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| CM100DY-12H | Dual IGBTMOD 100 Amperes/600 Volts |
| CM100DY-24H | HIGH POWER SWITCHING USE INSULATED TYPE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM100DU-24NFH_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM100DU-24NFH_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM100DU-34KA | 功能描述:IGBT MOD DUAL 1700V 100A KA SER RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| CM100DU-34KA_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM100DU-34KA_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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